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Русско-английский биологический словарь > подпороговый эффект
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effect (of)эффект основателя см. также основателя эффектэффект «растворения» (укрытия в группе) dilution effect, confusion effectнеблагоприятный эффект - adverse effect, harmful effectпарниковый эффект - greenhouse effect, hothouse effectпобочный эффект - side-effect, byproductРусско-английский словарь по этологии (поведению животных) > эффект
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Biology: subthreshold effectУниверсальный русско-английский словарь > подпороговый эффект
См. также в других словарях:
effect — The result or consequence of an action. [L. efficio, pp. effectus, to accomplish, fr. facio, to do] abscopal e. a reaction produced following irradiation but occurring outside the zone of actual radiation absorption. additive e. an e. wherein two … Medical dictionary
Double Diffused Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Metall-Oxid-Halbleiter-Feldeffekttransistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) gehört zu den Feldeffekttransistoren mit isoliertem Gate, auch als IGFET bezeichnet. Er ist den… … Deutsch Wikipedia
Bipolar disorder — Manic depression redirects here. For other uses, see Manic depression (disambiguation). Bipolar disorder Classification and external resources ICD 10 F … Wikipedia
Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next … Wikipedia
Lau Wai Shing — Wai Shing Lau (simplified Chinese name: 刘偉成, born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing. The family name of Lau is sometimes spelled as Liu like Liu Bang (founder of the Han dynasty) or Liu Shaoqi or Liu Bocheng. This is… … Wikipedia
Drain Induced Barrier Lowering — As channel length decreases, the barrier φB to be surmounted by an electron from the source on its way to the drain reduces Drain induced barrier lowering or DIBL is a secondary effect in MOSFETs referring originally to a reduction of threshold… … Wikipedia
Nonsynaptic plasticity — Brain connectivity network Nonsynaptic plasticity is a form of neuroplasticity that involves modification of ion channel function in the axon, dendrites, and cell body that results in specific changes in the integration of EPSPs and IPSPs, thus… … Wikipedia
Extreme ultraviolet lithography — (also known as EUV or EUVL ) is a next generation lithography technology using the 13.5 nm EUV wavelength. EUVL opticsEUVL is a significant departure from the deep ultraviolet lithography used today. All matter absorbs EUV radiation. Hence, EUV… … Wikipedia